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Charge pumping (CP) is a well-known measurement technique for analyzing the semiconductor–dielectric interface of MOS structures. Important information about the quality and degradation of a device can be extracted from charge pumping current (ICP) measurement results, including the interface trap density and the mean capture cross section. Pulsing a gate voltage and measuring a DC substrate current simultaneously is the basis for the various charge pumping methods, so a pulse generator and sensitive DC ammeter are required to make these measurements. 下載： 
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